Advanced Ni-based FUlly SIlicidation (FUSI) technology for sub-45nm CMOS devices

Advanced Ni-based FUlly SIlicidation (FUSI) technology for sub-45nm CMOS devices

10.1109/ICSICT.2006.306263

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Bibliographic Details
Main Authors: Yu, H.Y., Li, M.F., Lauwers, A., Kittl, J.A., Singanamalla, R., Veloso, A., Hoffmann, T., De Meyer, K., Jurczak, M., Absil, P., Biesemans, S.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/69242
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Institution: National University of Singapore
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Summary:10.1109/ICSICT.2006.306263

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