Advanced Ni-based FUlly SIlicidation (FUSI) technology for sub-45nm CMOS devices
10.1109/ICSICT.2006.306263
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Main Authors: | Yu, H.Y., Li, M.F., Lauwers, A., Kittl, J.A., Singanamalla, R., Veloso, A., Hoffmann, T., De Meyer, K., Jurczak, M., Absil, P., Biesemans, S. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/69242 |
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Institution: | National University of Singapore |
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