Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET

Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET

US7504329

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Bibliographic Details
Main Authors: YU, HONGYU, JINGDE, CHEN, MINGFU, LI, KWONG, DIM-LEE, BIESEMANS, SERGE, KITTL, JORGE ADRIAN
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Patent
Published: 2012
Online Access:http://scholarbank.nus.edu.sg/handle/10635/32777
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/32777

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