Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET

• Main Authors: YU, HONGYU, JINGDE, CHEN, MINGFU, LI, KWONG, DIM-LEE, BIESEMANS, SERGE, KITTL, JORGE ADRIAN
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Patent
• Published: 2012
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/32777
• Institution: National University of Singapore

US7504329