Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET
US7504329
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| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Patent |
| Published: |
2012
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| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/32777 |
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| Institution: | National University of Singapore |