Development of metal silicides for deep submicron polycrystalline silicon gate

• Main Author: Pang, Chong Hau
• Other Authors: Peter Hing
• Format: Theses and Dissertations
• Published: 2008
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
• Online Access: https://hdl.handle.net/10356/5099
• Institution: Nanyang Technological University

Metal silicides are used to reduce the polycrystalline silicon (polysilicon) gate and contact resistances during fabrication of transistors in microelectronics devices. Generally, Titanium disilicides and Cobalt disilicides are widely utilized on transistors while Nickel monosilicides (NiSi) are sti...