Development of metal silicides for deep submicron polycrystalline silicon gate

Development of metal silicides for deep submicron polycrystalline silicon gate

Metal silicides are used to reduce the polycrystalline silicon (polysilicon) gate and contact resistances during fabrication of transistors in microelectronics devices. Generally, Titanium disilicides and Cobalt disilicides are widely utilized on transistors while Nickel monosilicides (NiSi) are sti...

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Main Author: Pang, Chong Hau
Other Authors: Peter Hing
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Online Access:https://hdl.handle.net/10356/5099
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-50992020-06-01T12:00:55Z Development of metal silicides for deep submicron polycrystalline silicon gate Pang, Chong Hau Peter Hing School of Materials Science & Engineering Lee Pooi See DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects Metal silicides are used to reduce the polycrystalline silicon (polysilicon) gate and contact resistances during fabrication of transistors in microelectronics devices. Generally, Titanium disilicides and Cobalt disilicides are widely utilized on transistors while Nickel monosilicides (NiSi) are still under intense investigation for future transistor technology. However, reactions between parent metals (Ti, Co and Ni) and silicon often present many different problems during silicides formation. DOCTOR OF PHILOSOPHY (SME) 2008-09-17T10:19:57Z 2008-09-17T10:19:57Z 2005 2005 Thesis Pang, C. H. (2005). Development of metal silicides for deep submicron polycrystalline silicon gate. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/5099 10.32657/10356/5099 Nanyang Technological University 228 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
topic DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
spellingShingle DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Pang, Chong Hau
Development of metal silicides for deep submicron polycrystalline silicon gate
description Metal silicides are used to reduce the polycrystalline silicon (polysilicon) gate and contact resistances during fabrication of transistors in microelectronics devices. Generally, Titanium disilicides and Cobalt disilicides are widely utilized on transistors while Nickel monosilicides (NiSi) are still under intense investigation for future transistor technology. However, reactions between parent metals (Ti, Co and Ni) and silicon often present many different problems during silicides formation.
author2 Peter Hing
author_facet Peter Hing
Pang, Chong Hau
format Theses and Dissertations
author Pang, Chong Hau
author_sort Pang, Chong Hau
title Development of metal silicides for deep submicron polycrystalline silicon gate
title_short Development of metal silicides for deep submicron polycrystalline silicon gate
title_full Development of metal silicides for deep submicron polycrystalline silicon gate
title_fullStr Development of metal silicides for deep submicron polycrystalline silicon gate
title_full_unstemmed Development of metal silicides for deep submicron polycrystalline silicon gate
title_sort development of metal silicides for deep submicron polycrystalline silicon gate
publishDate 2008
url https://hdl.handle.net/10356/5099
_version_ 1681059539901743104

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