Development of metal silicides for deep submicron polycrystalline silicon gate

• المؤلف الرئيسي: Pang, Chong Hau
• مؤلفون آخرون: Peter Hing
• التنسيق: Theses and Dissertations
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/5099

Metal silicides are used to reduce the polycrystalline silicon (polysilicon) gate and contact resistances during fabrication of transistors in microelectronics devices. Generally, Titanium disilicides and Cobalt disilicides are widely utilized on transistors while Nickel monosilicides (NiSi) are sti...