Tantalum-based diffusion barriers for copper metallization

• 主要作者: Khin Maung Latt.
• 其他作者: School of Materials Science & Engineering
• 格式: Theses and Dissertations
• 出版: 2008
• 主題: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
• 在線閱讀: http://hdl.handle.net/10356/5062
• 機構: Nanyang Technological University

The technological trend of shrinking integrated circuits in order to increase the logic density and improve the chip performance requires substituting copper for aluminium as interconnects in the deep sub-quarter micron ultra large scale integration (ULSI) devices. This trend is also reinforced by t...