Electromigration behaviour of copper metal lines in ULSI devices

• 主要作者: Ong, Sock Meng.
• 其他作者: Park, Hun Sub
• 格式: Theses and Dissertations
• 出版: 2008
• 主題: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
• 在線閱讀: http://hdl.handle.net/10356/5097

The present study focused on examining the failure mechanisms in both single-level and double-level Cu damascene structures for better understanding of the Cu electromigration behaviour.