Electromigration behaviour of copper metal lines in ULSI devices

• Main Author: Ong, Sock Meng.
• Other Authors: Park, Hun Sub
• Format: Theses and Dissertations
• Published: 2008
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
• Online Access: http://hdl.handle.net/10356/5097
• Institution: Nanyang Technological University

The present study focused on examining the failure mechanisms in both single-level and double-level Cu damascene structures for better understanding of the Cu electromigration behaviour.