Study on copper electromigration reliability of the ULSI devices

• المؤلف الرئيسي: Low, Joon Kiat.
• مؤلفون آخرون: Park, Hun Sub
• التنسيق: Theses and Dissertations
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/5086
• المؤسسة: Nanyang Technological University

This project studies copper electromigration reliability with the help of engineers of Chartered Semiconductor Mfg. Ltd. As the processing of the copper metallization can greatly affect its reliability, experiments will be conducted to determine how some of the processing conditions and environments...