Study on copper electromigration reliability of the ULSI devices

This project studies copper electromigration reliability with the help of engineers of Chartered Semiconductor Mfg. Ltd. As the processing of the copper metallization can greatly affect its reliability, experiments will be conducted to determine how some of the processing conditions and environments...

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Bibliographic Details
Main Author:	Low, Joon Kiat.
Other Authors:	Park, Hun Sub
Format:	Theses and Dissertations
Published:	2008
Subjects:	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Online Access:	http://hdl.handle.net/10356/5086
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Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-5086
record_format	dspace
spelling	sg-ntu-dr.10356-50862023-03-04T16:34:19Z Study on copper electromigration reliability of the ULSI devices Low, Joon Kiat. Park, Hun Sub School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects This project studies copper electromigration reliability with the help of engineers of Chartered Semiconductor Mfg. Ltd. As the processing of the copper metallization can greatly affect its reliability, experiments will be conducted to determine how some of the processing conditions and environments can affect the performance of copper. Master of Engineering (SME) 2008-09-17T10:19:34Z 2008-09-17T10:19:34Z 2003 2003 Thesis http://hdl.handle.net/10356/5086 Nanyang Technological University 135 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
spellingShingle	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects Low, Joon Kiat. Study on copper electromigration reliability of the ULSI devices
description	This project studies copper electromigration reliability with the help of engineers of Chartered Semiconductor Mfg. Ltd. As the processing of the copper metallization can greatly affect its reliability, experiments will be conducted to determine how some of the processing conditions and environments can affect the performance of copper.
author2	Park, Hun Sub
author_facet	Park, Hun Sub Low, Joon Kiat.
format	Theses and Dissertations
author	Low, Joon Kiat.
author_sort	Low, Joon Kiat.
title	Study on copper electromigration reliability of the ULSI devices
title_short	Study on copper electromigration reliability of the ULSI devices
title_full	Study on copper electromigration reliability of the ULSI devices
title_fullStr	Study on copper electromigration reliability of the ULSI devices
title_full_unstemmed	Study on copper electromigration reliability of the ULSI devices
title_sort	study on copper electromigration reliability of the ulsi devices
publishDate	2008
url	http://hdl.handle.net/10356/5086
_version_	1759855205052055552

Study on copper electromigration reliability of the ULSI devices

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