Study on copper electromigration reliability of the ULSI devices
This project studies copper electromigration reliability with the help of engineers of Chartered Semiconductor Mfg. Ltd. As the processing of the copper metallization can greatly affect its reliability, experiments will be conducted to determine how some of the processing conditions and environments...
Saved in:
| 主要作者: | |
|---|---|
| 其他作者: | |
| 格式: | Theses and Dissertations |
| 出版: |
2008
|
| 主題: | |
| 在線閱讀: | http://hdl.handle.net/10356/5086 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
| 機構: | Nanyang Technological University |
| id |
sg-ntu-dr.10356-5086 |
|---|---|
| record_format |
dspace |
| spelling |
sg-ntu-dr.10356-50862023-03-04T16:34:19Z Study on copper electromigration reliability of the ULSI devices Low, Joon Kiat. Park, Hun Sub School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects This project studies copper electromigration reliability with the help of engineers of Chartered Semiconductor Mfg. Ltd. As the processing of the copper metallization can greatly affect its reliability, experiments will be conducted to determine how some of the processing conditions and environments can affect the performance of copper. Master of Engineering (SME) 2008-09-17T10:19:34Z 2008-09-17T10:19:34Z 2003 2003 Thesis http://hdl.handle.net/10356/5086 Nanyang Technological University 135 p. application/pdf |
| institution |
Nanyang Technological University |
| building |
NTU Library |
| continent |
Asia |
| country |
Singapore Singapore |
| content_provider |
NTU Library |
| collection |
DR-NTU |
| topic |
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects |
| spellingShingle |
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects Low, Joon Kiat. Study on copper electromigration reliability of the ULSI devices |
| description |
This project studies copper electromigration reliability with the help of engineers of Chartered Semiconductor Mfg. Ltd. As the processing of the copper metallization can greatly affect its reliability, experiments will be conducted to determine how some of the processing conditions and environments can affect the performance of copper. |
| author2 |
Park, Hun Sub |
| author_facet |
Park, Hun Sub Low, Joon Kiat. |
| format |
Theses and Dissertations |
| author |
Low, Joon Kiat. |
| author_sort |
Low, Joon Kiat. |
| title |
Study on copper electromigration reliability of the ULSI devices |
| title_short |
Study on copper electromigration reliability of the ULSI devices |
| title_full |
Study on copper electromigration reliability of the ULSI devices |
| title_fullStr |
Study on copper electromigration reliability of the ULSI devices |
| title_full_unstemmed |
Study on copper electromigration reliability of the ULSI devices |
| title_sort |
study on copper electromigration reliability of the ulsi devices |
| publishDate |
2008 |
| url |
http://hdl.handle.net/10356/5086 |
| _version_ |
1759855205052055552 |