Study on copper electromigration reliability of the ULSI devices
This project studies copper electromigration reliability with the help of engineers of Chartered Semiconductor Mfg. Ltd. As the processing of the copper metallization can greatly affect its reliability, experiments will be conducted to determine how some of the processing conditions and environments...
Saved in:
Main Author: | Low, Joon Kiat. |
---|---|
Other Authors: | Park, Hun Sub |
Format: | Theses and Dissertations |
Published: |
2008
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/5086 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Similar Items
-
Electromigration behaviour of copper metal lines in ULSI devices
by: Ong, Sock Meng.
Published: (2008) -
Investigating the electromigration reliability of copper interconnects
by: Shao, Wei
Published: (2010) -
Chemical mechanical polishing process of copper metallization in the ULSI devices
by: Leow, Nelson Whatt Wei.
Published: (2008) -
Electromigration reliability study on copper interconnects under pulsed current conditions
by: Lim, Meng Keong
Published: (2015) -
Modeling of electromigration failure under pulsed current conditions in confined copper interconnect
by: Lin, Jingyuan.
Published: (2010)