Dielectric failure mechanisms in advanced Cu/low-k interconnect architecture

Time-dependent dielectric breakdown (TDDB) reliability is increasingly becoming a critical reliability concern with the introduction of lower dielectric constant materials and shrinking of metal spacing in the back-end-of-line technology. Therefore, there is a need to investigate the factors causing...

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Bibliographic Details
Main Author: Tan, Tam Lyn
Other Authors: Hwang Nam
Format: Theses and Dissertations
Language:English
Published: 2008
Subjects:
Online Access:https://hdl.handle.net/10356/14244
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Institution: Nanyang Technological University
Language: English