Investigation on the formation of C54-TiSi2 used as contact metallization in ULSI application

• 主要作者: Zhang, Lin
• 其他作者: Park, Hun Sub
• 格式: Theses and Dissertations
• 出版: 2008
• 主題: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
• 在線閱讀: http://hdl.handle.net/10356/5141

Titanium silicide has been widely adopted as a contact material for gate, source and drain of semiconductor devices in the industry for several generations. Its applicability to sub-quarter-micron technologies, however, has been questioned due to difficulties of obtaining low sheet resistance on sma...