Investigation on the formation of C54-TiSi2 used as contact metallization in ULSI application

Investigation on the formation of C54-TiSi2 used as contact metallization in ULSI application

Titanium silicide has been widely adopted as a contact material for gate, source and drain of semiconductor devices in the industry for several generations. Its applicability to sub-quarter-micron technologies, however, has been questioned due to difficulties of obtaining low sheet resistance on sma...

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Bibliographic Details
Main Author: Zhang, Lin
Other Authors: Park, Hun Sub
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Online Access:http://hdl.handle.net/10356/5141
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Institution: Nanyang Technological University
Description
Summary:Titanium silicide has been widely adopted as a contact material for gate, source and drain of semiconductor devices in the industry for several generations. Its applicability to sub-quarter-micron technologies, however, has been questioned due to difficulties of obtaining low sheet resistance on small geometries.

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