Investigation on the formation of C54-TiSi2 used as contact metallization in ULSI application

• Main Author: Zhang, Lin
• Other Authors: Park, Hun Sub
• Format: Theses and Dissertations
• Published: 2008
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
• Online Access: http://hdl.handle.net/10356/5141
• Institution: Nanyang Technological University

Titanium silicide has been widely adopted as a contact material for gate, source and drain of semiconductor devices in the industry for several generations. Its applicability to sub-quarter-micron technologies, however, has been questioned due to difficulties of obtaining low sheet resistance on sma...