Investigation on the formation of C54-TiSi2 used as contact metallization in ULSI application

Titanium silicide has been widely adopted as a contact material for gate, source and drain of semiconductor devices in the industry for several generations. Its applicability to sub-quarter-micron technologies, however, has been questioned due to difficulties of obtaining low sheet resistance on sma...

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Main Author: Zhang, Lin
Other Authors: Park, Hun Sub
Format: Theses and Dissertations
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10356/5141
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-51412023-03-04T16:32:45Z Investigation on the formation of C54-TiSi2 used as contact metallization in ULSI application Zhang, Lin Park, Hun Sub School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects Titanium silicide has been widely adopted as a contact material for gate, source and drain of semiconductor devices in the industry for several generations. Its applicability to sub-quarter-micron technologies, however, has been questioned due to difficulties of obtaining low sheet resistance on small geometries. Doctor of Philosophy (SME) 2008-09-17T10:21:05Z 2008-09-17T10:21:05Z 2002 2002 Thesis http://hdl.handle.net/10356/5141 Nanyang Technological University 141 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
spellingShingle DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Zhang, Lin
Investigation on the formation of C54-TiSi2 used as contact metallization in ULSI application
description Titanium silicide has been widely adopted as a contact material for gate, source and drain of semiconductor devices in the industry for several generations. Its applicability to sub-quarter-micron technologies, however, has been questioned due to difficulties of obtaining low sheet resistance on small geometries.
author2 Park, Hun Sub
author_facet Park, Hun Sub
Zhang, Lin
format Theses and Dissertations
author Zhang, Lin
author_sort Zhang, Lin
title Investigation on the formation of C54-TiSi2 used as contact metallization in ULSI application
title_short Investigation on the formation of C54-TiSi2 used as contact metallization in ULSI application
title_full Investigation on the formation of C54-TiSi2 used as contact metallization in ULSI application
title_fullStr Investigation on the formation of C54-TiSi2 used as contact metallization in ULSI application
title_full_unstemmed Investigation on the formation of C54-TiSi2 used as contact metallization in ULSI application
title_sort investigation on the formation of c54-tisi2 used as contact metallization in ulsi application
publishDate 2008
url http://hdl.handle.net/10356/5141
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