Investigation on the formation of C54-TiSi2 used as contact metallization in ULSI application
Titanium silicide has been widely adopted as a contact material for gate, source and drain of semiconductor devices in the industry for several generations. Its applicability to sub-quarter-micron technologies, however, has been questioned due to difficulties of obtaining low sheet resistance on sma...
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sg-ntu-dr.10356-51412023-03-04T16:32:45Z Investigation on the formation of C54-TiSi2 used as contact metallization in ULSI application Zhang, Lin Park, Hun Sub School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects Titanium silicide has been widely adopted as a contact material for gate, source and drain of semiconductor devices in the industry for several generations. Its applicability to sub-quarter-micron technologies, however, has been questioned due to difficulties of obtaining low sheet resistance on small geometries. Doctor of Philosophy (SME) 2008-09-17T10:21:05Z 2008-09-17T10:21:05Z 2002 2002 Thesis http://hdl.handle.net/10356/5141 Nanyang Technological University 141 p. application/pdf |
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DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects Zhang, Lin Investigation on the formation of C54-TiSi2 used as contact metallization in ULSI application |
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Titanium silicide has been widely adopted as a contact material for gate, source and drain of semiconductor devices in the industry for several generations. Its applicability to sub-quarter-micron technologies, however, has been questioned due to difficulties of obtaining low sheet resistance on small geometries. |
author2 |
Park, Hun Sub |
author_facet |
Park, Hun Sub Zhang, Lin |
format |
Theses and Dissertations |
author |
Zhang, Lin |
author_sort |
Zhang, Lin |
title |
Investigation on the formation of C54-TiSi2 used as contact metallization in ULSI application |
title_short |
Investigation on the formation of C54-TiSi2 used as contact metallization in ULSI application |
title_full |
Investigation on the formation of C54-TiSi2 used as contact metallization in ULSI application |
title_fullStr |
Investigation on the formation of C54-TiSi2 used as contact metallization in ULSI application |
title_full_unstemmed |
Investigation on the formation of C54-TiSi2 used as contact metallization in ULSI application |
title_sort |
investigation on the formation of c54-tisi2 used as contact metallization in ulsi application |
publishDate |
2008 |
url |
http://hdl.handle.net/10356/5141 |
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1759858214611976192 |