Electromigration behaviour of copper metal lines in ULSI devices
The present study focused on examining the failure mechanisms in both single-level and double-level Cu damascene structures for better understanding of the Cu electromigration behaviour.
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2008
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sg-ntu-dr.10356-50972023-03-04T16:31:29Z Electromigration behaviour of copper metal lines in ULSI devices Ong, Sock Meng. Park, Hun Sub School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects The present study focused on examining the failure mechanisms in both single-level and double-level Cu damascene structures for better understanding of the Cu electromigration behaviour. Master of Engineering (SME) 2008-09-17T10:19:54Z 2008-09-17T10:19:54Z 2004 2004 Thesis http://hdl.handle.net/10356/5097 Nanyang Technological University 169 p. application/pdf |
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DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects Ong, Sock Meng. Electromigration behaviour of copper metal lines in ULSI devices |
description |
The present study focused on examining the failure mechanisms in both single-level and double-level Cu damascene structures for better understanding of the Cu electromigration behaviour. |
author2 |
Park, Hun Sub |
author_facet |
Park, Hun Sub Ong, Sock Meng. |
format |
Theses and Dissertations |
author |
Ong, Sock Meng. |
author_sort |
Ong, Sock Meng. |
title |
Electromigration behaviour of copper metal lines in ULSI devices |
title_short |
Electromigration behaviour of copper metal lines in ULSI devices |
title_full |
Electromigration behaviour of copper metal lines in ULSI devices |
title_fullStr |
Electromigration behaviour of copper metal lines in ULSI devices |
title_full_unstemmed |
Electromigration behaviour of copper metal lines in ULSI devices |
title_sort |
electromigration behaviour of copper metal lines in ulsi devices |
publishDate |
2008 |
url |
http://hdl.handle.net/10356/5097 |
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1759857933814857728 |