Electromigration behaviour of copper metal lines in ULSI devices

Electromigration behaviour of copper metal lines in ULSI devices

The present study focused on examining the failure mechanisms in both single-level and double-level Cu damascene structures for better understanding of the Cu electromigration behaviour.

Saved in:
Bibliographic Details
Main Author: Ong, Sock Meng.
Other Authors: Park, Hun Sub
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Online Access:http://hdl.handle.net/10356/5097
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Description
Summary:The present study focused on examining the failure mechanisms in both single-level and double-level Cu damascene structures for better understanding of the Cu electromigration behaviour.

Similar Items