Electromigration behaviour of copper metal lines in ULSI devices

• المؤلف الرئيسي: Ong, Sock Meng.
• مؤلفون آخرون: Park, Hun Sub
• التنسيق: Theses and Dissertations
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/5097

The present study focused on examining the failure mechanisms in both single-level and double-level Cu damascene structures for better understanding of the Cu electromigration behaviour.