Tantalum-based diffusion barriers for copper metallization

Tantalum-based diffusion barriers for copper metallization

The technological trend of shrinking integrated circuits in order to increase the logic density and improve the chip performance requires substituting copper for aluminium as interconnects in the deep sub-quarter micron ultra large scale integration (ULSI) devices. This trend is also reinforced by t...

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Bibliographic Details
Main Author: Khin Maung Latt.
Other Authors: School of Materials Science & Engineering
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Online Access:http://hdl.handle.net/10356/5062
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Institution: Nanyang Technological University
Description
Summary:The technological trend of shrinking integrated circuits in order to increase the logic density and improve the chip performance requires substituting copper for aluminium as interconnects in the deep sub-quarter micron ultra large scale integration (ULSI) devices. This trend is also reinforced by the fact that copper offers lower electrical resistivity.

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