Tantalum-based diffusion barriers for copper metallization

Tantalum-based diffusion barriers for copper metallization

The technological trend of shrinking integrated circuits in order to increase the logic density and improve the chip performance requires substituting copper for aluminium as interconnects in the deep sub-quarter micron ultra large scale integration (ULSI) devices. This trend is also reinforced by t...

Full description

Saved in:
Bibliographic Details
Main Author: Khin Maung Latt.
Other Authors: School of Materials Science & Engineering
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Online Access:http://hdl.handle.net/10356/5062
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
id sg-ntu-dr.10356-5062
record_format dspace
spelling sg-ntu-dr.10356-50622020-06-01T11:56:55Z Tantalum-based diffusion barriers for copper metallization Khin Maung Latt. School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects The technological trend of shrinking integrated circuits in order to increase the logic density and improve the chip performance requires substituting copper for aluminium as interconnects in the deep sub-quarter micron ultra large scale integration (ULSI) devices. This trend is also reinforced by the fact that copper offers lower electrical resistivity. Doctor of Philosophy (SME) 2008-09-17T10:18:57Z 2008-09-17T10:18:57Z 2003 2003 Thesis http://hdl.handle.net/10356/5062 Nanyang Technological University 204 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
topic DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
spellingShingle DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Khin Maung Latt.
Tantalum-based diffusion barriers for copper metallization
description The technological trend of shrinking integrated circuits in order to increase the logic density and improve the chip performance requires substituting copper for aluminium as interconnects in the deep sub-quarter micron ultra large scale integration (ULSI) devices. This trend is also reinforced by the fact that copper offers lower electrical resistivity.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Khin Maung Latt.
format Theses and Dissertations
author Khin Maung Latt.
author_sort Khin Maung Latt.
title Tantalum-based diffusion barriers for copper metallization
title_short Tantalum-based diffusion barriers for copper metallization
title_full Tantalum-based diffusion barriers for copper metallization
title_fullStr Tantalum-based diffusion barriers for copper metallization
title_full_unstemmed Tantalum-based diffusion barriers for copper metallization
title_sort tantalum-based diffusion barriers for copper metallization
publishDate 2008
url http://hdl.handle.net/10356/5062
_version_ 1681057489478483968

Similar Items