Fully silicided NiSi:Hf-LaAlO3/SG-GOI n-MOSFETs with high electron mobility

Fully silicided NiSi:Hf-LaAlO3/SG-GOI n-MOSFETs with high electron mobility

10.1109/LED.2004.832527

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Bibliographic Details
Main Authors: Yu, D.S., Chiang, K.C., Cheng, C.F., Chin, A., Zhu, C., Li, M.F., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82392
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/82392

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