Fully silicided NiSi:Hf-LaAlO3/SG-GOI n-MOSFETs with high electron mobility

10.1109/LED.2004.832527

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Bibliographic Details
Main Authors:	Yu, D.S., Chiang, K.C., Cheng, C.F., Chin, A., Zhu, C., Li, M.F., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82392
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82392
record_format	dspace
spelling	sg-nus-scholar.10635-823922023-10-29T22:38:38Z Fully silicided NiSi:Hf-LaAlO3/SG-GOI n-MOSFETs with high electron mobility Yu, D.S. Chiang, K.C. Cheng, C.F. Chin, A. Zhu, C. Li, M.F. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING 10.1109/LED.2004.832527 IEEE Electron Device Letters 25 8 559-561 EDLED 2014-10-07T04:28:50Z 2014-10-07T04:28:50Z 2004-08 Article Yu, D.S., Chiang, K.C., Cheng, C.F., Chin, A., Zhu, C., Li, M.F., Kwong, D.-L. (2004-08). Fully silicided NiSi:Hf-LaAlO3/SG-GOI n-MOSFETs with high electron mobility. IEEE Electron Device Letters 25 (8) : 559-561. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.832527 07413106 http://scholarbank.nus.edu.sg/handle/10635/82392 000222905100015 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1109/LED.2004.832527
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Yu, D.S. Chiang, K.C. Cheng, C.F. Chin, A. Zhu, C. Li, M.F. Kwong, D.-L.
format	Article
author	Yu, D.S. Chiang, K.C. Cheng, C.F. Chin, A. Zhu, C. Li, M.F. Kwong, D.-L.
spellingShingle	Yu, D.S. Chiang, K.C. Cheng, C.F. Chin, A. Zhu, C. Li, M.F. Kwong, D.-L. Fully silicided NiSi:Hf-LaAlO3/SG-GOI n-MOSFETs with high electron mobility
author_sort	Yu, D.S.
title	Fully silicided NiSi:Hf-LaAlO3/SG-GOI n-MOSFETs with high electron mobility
title_short	Fully silicided NiSi:Hf-LaAlO3/SG-GOI n-MOSFETs with high electron mobility
title_full	Fully silicided NiSi:Hf-LaAlO3/SG-GOI n-MOSFETs with high electron mobility
title_fullStr	Fully silicided NiSi:Hf-LaAlO3/SG-GOI n-MOSFETs with high electron mobility
title_full_unstemmed	Fully silicided NiSi:Hf-LaAlO3/SG-GOI n-MOSFETs with high electron mobility
title_sort	fully silicided nisi:hf-laalo3/sg-goi n-mosfets with high electron mobility
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82392
_version_	1781784125548527616

Fully silicided NiSi:Hf-LaAlO3/SG-GOI n-MOSFETs with high electron mobility

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