The effect of IrO2-IrO2- Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-D GOI CMOSFETs

10.1109/LED.2005.848130

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Bibliographic Details
Main Authors: Yu, D.S., Liao, C.C., Cheng, C.F., Chin, A., Li, M.F., McAlister, S.P.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83161
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Institution: National University of Singapore