High-performance poly-silicon TFTs incorporating LaA1O3 as the gate dielectric

• Main Authors: Hung, B.F., Chiang, K.C., Huang, C.C., Chin, A., McAlister, S.P.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: High-Κ; LaAlO3; Thin-film transistors (TFTs); Threshold voltage
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82467
• Institution: National University of Singapore

10.1109/LED.2005.848622