High-performance poly-silicon TFTs incorporating LaA1O3 as the gate dielectric

بواسطة Hung, B.F., Chiang, K.C., Huang, C.C., Chin, A., McAlister, S.P.
منشور في 2014

Very high κ and high density TiTaO MIM capacitors for analog and RF applications

بواسطة Chiang, K.C., Chin, A., Lai, C.H., Chen, W.J., Cheng, C.F., Hung, B.F., Liao, C.C.
منشور في 2014

Very low noise RF nMOSFETs on pastic by substrate thinning and wafer transfer

بواسطة Kao, H.L., Hung, B.F., Chin, A., Lai, J.M., Lee, C.F., McAlister, S.P., Chi, C.C.
منشور في 2014

High work function IrxSi gates on HfAlON p-MOSFETs

بواسطة Wu, C.H., Yu, D.S., Chin, A., Wang, S.J., Li, M.-F., Zhu, C., Hung, B.F., McAlister, S.P.
منشور في 2014

Low workfunction fully suicided gate on SiO2/Si and LaAlO 3/GOI n-MOSFETs

بواسطة Yu, D.S., Chin, A., Hung, B.F., Chen, W.J., Zhu, C.X., Li, M.-F., Zhu, S.Y., Kwong, D.L.
منشور في 2014

A novel program-erasable high-κ AlN capacitor with memory function

بواسطة Chin, A., Lai, C.H., Hung, B.F., Cheng, C.F., McAlister, S.P., Zhu, C., Li, M.-F., Kwong, D.-L.
منشور في 2014

Low noise and high gain RF MOSFETs on plastic substrates

بواسطة Kao, H.L., Chin, A., Huang, C.C., Hung, B.F., Chiang, K.C., Lai, Z.M., McAlister, S.P., Chi, C.C.
منشور في 2014

Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference

بواسطة Yu, D.S., Chin, A., Wu, C.H., Li, M.-F., Zhu, C., Wang, S.J., Yoo, W.J., Hung, B.F., McAlister, S.P.
منشور في 2014

A novel program-erasable high-k AlN-Si MIS capacitor

بواسطة Lai, C.H., Chin, A., Hung, B.F., Cheng, C.F., Yoo, W.J., Li, M.F., Zhu, C., McAlister, S.P., Kwong, D.-L.
منشور في 2014

Low noise RF MOSFETs on flexible plastic substrates

بواسطة Kao, H.L., Chin, A., Hung, B.F., Lee, C.F., Lai, J.M., McAlister, S.P., Samudra, G.S., Yoo, W.J., Chi, C.C.
منشور في 2014

Strain-induced very low noise RF MOSFETs on flexible plastic substrate

بواسطة Kao, H.L., Chin, A., Hung, B.F., Lai, J.M., Lee, C.F., Li, M.-F., Samudra, G.S., Zhu, C., Xia, Z.L., Liu, X.Y., Kang, J.F.
منشور في 2014

High temperature stable [Ir3Si-TaN]/HfLaON CMOS with large work-function difference

بواسطة Wu, C.H., Hung, B.F., Chin, A., Wang, S.J., Chen, W.J., Wang, X.P., Li, M.-F., Zhu, C., Jin, Y., Tao, H.J., Chen, S.C., Liang, M.S.
منشور في 2014

High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate

بواسطة Wu, C.H., Hung, B.F., Chin, A., Wang, S.J., Wang, X.P., Li, M.-F., Zhu, C., Yen, F.Y., Hou, Y.T., Jin, Y., Tao, H.J., Chen, S.C., Liang, M.S.
منشور في 2014