Very low noise RF nMOSFETs on pastic by substrate thinning and wafer transfer

• Main Authors: Kao, H.L., Hung, B.F., Chin, A., Lai, J.M., Lee, C.F., McAlister, S.P., Chi, C.C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Associated gain; Metal-oxide semiconductor field-effect transistor (MOSFET); Minimum noise figure; Plastic; Radio frequency (RF)
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83260
• Institution: National University of Singapore

10.1109/LMWC.2005.858999