High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate

High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate

10.1109/LED.2007.892367

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Bibliographic Details
Main Authors: Wu, C.H., Hung, B.F., Chin, A., Wang, S.J., Wang, X.P., Li, M.-F., Zhu, C., Yen, F.Y., Hou, Y.T., Jin, Y., Tao, H.J., Chen, S.C., Liang, M.S.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
HfLaON
Ir3Si
MOSFET
Work function
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82470
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82470

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