High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate

10.1109/LED.2007.892367

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Bibliographic Details
Main Authors:	Wu, C.H., Hung, B.F., Chin, A., Wang, S.J., Wang, X.P., Li, M.-F., Zhu, C., Yen, F.Y., Hou, Y.T., Jin, Y., Tao, H.J., Chen, S.C., Liang, M.S.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	HfLaON Ir3Si MOSFET Work function
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82470
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82470
record_format	dspace
spelling	sg-nus-scholar.10635-824702023-10-30T07:55:33Z High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate Wu, C.H. Hung, B.F. Chin, A. Wang, S.J. Wang, X.P. Li, M.-F. Zhu, C. Yen, F.Y. Hou, Y.T. Jin, Y. Tao, H.J. Chen, S.C. Liang, M.S. ELECTRICAL & COMPUTER ENGINEERING HfLaON Ir3Si MOSFET Work function 10.1109/LED.2007.892367 IEEE Electron Device Letters 28 4 292-294 EDLED 2014-10-07T04:29:47Z 2014-10-07T04:29:47Z 2007-04 Article Wu, C.H., Hung, B.F., Chin, A., Wang, S.J., Wang, X.P., Li, M.-F., Zhu, C., Yen, F.Y., Hou, Y.T., Jin, Y., Tao, H.J., Chen, S.C., Liang, M.S. (2007-04). High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate. IEEE Electron Device Letters 28 (4) : 292-294. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.892367 07413106 http://scholarbank.nus.edu.sg/handle/10635/82470 000245225300012 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	HfLaON Ir3Si MOSFET Work function
spellingShingle	HfLaON Ir3Si MOSFET Work function Wu, C.H. Hung, B.F. Chin, A. Wang, S.J. Wang, X.P. Li, M.-F. Zhu, C. Yen, F.Y. Hou, Y.T. Jin, Y. Tao, H.J. Chen, S.C. Liang, M.S. High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate
description	10.1109/LED.2007.892367
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Wu, C.H. Hung, B.F. Chin, A. Wang, S.J. Wang, X.P. Li, M.-F. Zhu, C. Yen, F.Y. Hou, Y.T. Jin, Y. Tao, H.J. Chen, S.C. Liang, M.S.
format	Article
author	Wu, C.H. Hung, B.F. Chin, A. Wang, S.J. Wang, X.P. Li, M.-F. Zhu, C. Yen, F.Y. Hou, Y.T. Jin, Y. Tao, H.J. Chen, S.C. Liang, M.S.
author_sort	Wu, C.H.
title	High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate
title_short	High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate
title_full	High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate
title_fullStr	High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate
title_full_unstemmed	High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate
title_sort	high-temperature stable hflaon p-mosfets with high-work-function ir 3si gate
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82470
_version_	1781784145637146624

High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate

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