High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate

• Main Authors: Wu, C.H., Hung, B.F., Chin, A., Wang, S.J., Wang, X.P., Li, M.-F., Zhu, C., Yen, F.Y., Hou, Y.T., Jin, Y., Tao, H.J., Chen, S.C., Liang, M.S.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: HfLaON; Ir3Si; MOSFET; Work function
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82470
• Institution: National University of Singapore

10.1109/LED.2007.892367