Improvements on surface carrier mobility and electrical stability of MOSFETs using HfTaO gate dielectric

Improvements on surface carrier mobility and electrical stability of MOSFETs using HfTaO gate dielectric

10.1109/TED.2004.839114

Saved in:
Bibliographic Details
Main Authors: Yu, X., Zhu, C., Yu, M., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Crystallization temperature
Electrical stability
HfO2
HfTaO
High-K
Interface states density (Dit)
Mobility
MOSFET
Vth shift
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82512
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82512

Similar Items