Improvements on surface carrier mobility and electrical stability of MOSFETs using HfTaO gate dielectric

Improvements on surface carrier mobility and electrical stability of MOSFETs using HfTaO gate dielectric

10.1109/TED.2004.839114

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Bibliographic Details
Main Authors: Yu, X., Zhu, C., Yu, M., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Crystallization temperature
Electrical stability
HfO2
HfTaO
High-K
Interface states density (Dit)
Mobility
MOSFET
Vth shift
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82512
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Institution: National University of Singapore
Description
Summary:10.1109/TED.2004.839114

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