High-performance poly-silicon TFTs incorporating LaA1O3 as the gate dielectric

10.1109/LED.2005.848622

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Bibliographic Details
Main Authors:	Hung, B.F., Chiang, K.C., Huang, C.C., Chin, A., McAlister, S.P.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	High-Κ LaAlO3 Thin-film transistors (TFTs) Threshold voltage
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82467
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82467
record_format	dspace
spelling	sg-nus-scholar.10635-824672024-11-08T18:49:14Z High-performance poly-silicon TFTs incorporating LaA1O3 as the gate dielectric Hung, B.F. Chiang, K.C. Huang, C.C. Chin, A. McAlister, S.P. ELECTRICAL & COMPUTER ENGINEERING High-Κ LaAlO3 Thin-film transistors (TFTs) Threshold voltage 10.1109/LED.2005.848622 IEEE Electron Device Letters 26 6 384-386 EDLED 2014-10-07T04:29:45Z 2014-10-07T04:29:45Z 2005-06 Article Hung, B.F., Chiang, K.C., Huang, C.C., Chin, A., McAlister, S.P. (2005-06). High-performance poly-silicon TFTs incorporating LaA1O3 as the gate dielectric. IEEE Electron Device Letters 26 (6) : 384-386. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.848622 07413106 http://scholarbank.nus.edu.sg/handle/10635/82467 000229522000014 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	High-Κ LaAlO3 Thin-film transistors (TFTs) Threshold voltage
spellingShingle	High-Κ LaAlO3 Thin-film transistors (TFTs) Threshold voltage Hung, B.F. Chiang, K.C. Huang, C.C. Chin, A. McAlister, S.P. High-performance poly-silicon TFTs incorporating LaA1O3 as the gate dielectric
description	10.1109/LED.2005.848622
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Hung, B.F. Chiang, K.C. Huang, C.C. Chin, A. McAlister, S.P.
format	Article
author	Hung, B.F. Chiang, K.C. Huang, C.C. Chin, A. McAlister, S.P.
author_sort	Hung, B.F.
title	High-performance poly-silicon TFTs incorporating LaA1O3 as the gate dielectric
title_short	High-performance poly-silicon TFTs incorporating LaA1O3 as the gate dielectric
title_full	High-performance poly-silicon TFTs incorporating LaA1O3 as the gate dielectric
title_fullStr	High-performance poly-silicon TFTs incorporating LaA1O3 as the gate dielectric
title_full_unstemmed	High-performance poly-silicon TFTs incorporating LaA1O3 as the gate dielectric
title_sort	high-performance poly-silicon tfts incorporating laa1o3 as the gate dielectric
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82467
_version_	1821188016575610880

High-performance poly-silicon TFTs incorporating LaA1O3 as the gate dielectric

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