Room-temperature fabricated thin-film transistors based on compounds with lanthanum and main family element boron

• Main Authors: Xiao, Peng, Huang, Junhua, Dong, Ting, Xie, Jianing, Yuan, Jian, Luo, Dongxiang, Liu, Baiquan
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2018
• Subjects: LaBx; Thin Film Transistors
• Online Access: https://hdl.handle.net/10356/84300; http://hdl.handle.net/10220/45110
• Institution: Nanyang Technological University

For the first time, compounds with lanthanum from the main family element Boron (LaBx) were investigated as an active layer for thin-film transistors (TFTs). Detailed studies showed that the room-temperature fabricated LaBx thin film was in the crystalline state with a relatively narrow optical band...