Enhancement in performance and reliability of transparent IGZO thin-film transistors by ITO/Ti stacked source/drain contacts

Enhancement in performance and reliability of transparent IGZO thin-film transistors by ITO/Ti stacked source/drain contacts

Enhancement in performance and reliability of transparent IGZO thin-film transistor (TFT) was achieved by adopting a laminated structure with a thin ITO layer and an ultrathin Ti layer as the source/drain (S/D) contacts. Compared with the transparent TFT with pure ITO S/D contacts, the transparent T...

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Bibliographic Details
Main Authors: Li, Yuanbo, Chen, Tupei
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2024
Subjects:
Engineering
Transparent Thin Film Transistor
Laminated Structures
Online Access:https://hdl.handle.net/10356/173472
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/173472

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