Enhancement in performance and reliability of transparent IGZO thin-film transistors by ITO/Ti stacked source/drain contacts
Enhancement in performance and reliability of transparent IGZO thin-film transistor (TFT) was achieved by adopting a laminated structure with a thin ITO layer and an ultrathin Ti layer as the source/drain (S/D) contacts. Compared with the transparent TFT with pure ITO S/D contacts, the transparent T...
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| Main Authors: | , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/173472 |
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| Institution: | Nanyang Technological University |
| Language: | English |