Indium tungsten oxide thin films for flexible high-performance transistors and neuromorphic electronics

Thin-film transistors (TFTs) with high electrical performances (mobility > 10 cm2/V s, Vth < 1 V, SS < 1 V/decade, on/off ratio ≈ 106) obtained from the silicon- and oxide-based single-crystalline semiconductor materials require high processing temperature and hence are not suitable for fle...

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Main Authors: Kulkarni, Mohit Rameshchandra, Tiwari, Nidhi, Rajput, Mayank, John, Rohit Abraham, Nguyen, Anh Chien, Mathews, Nripan
其他作者: School of Materials Science & Engineering
格式: Article
語言:English
出版: 2019
主題:
在線閱讀:https://hdl.handle.net/10356/104476
http://hdl.handle.net/10220/49997
https://doi.org/10.21979/N9/WCSPEO
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機構: Nanyang Technological University
語言: English