Indium tungsten oxide thin films for flexible high-performance transistors and neuromorphic electronics

• Main Authors: Kulkarni, Mohit Rameshchandra, Tiwari, Nidhi, Rajput, Mayank, John, Rohit Abraham, Nguyen, Anh Chien, Mathews, Nripan
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2019
• Subjects: Engineering::Materials; Transparent Amorphous Oxide Semiconductor; Thin Films
• Online Access: https://hdl.handle.net/10356/104476; http://hdl.handle.net/10220/49997; https://doi.org/10.21979/N9/WCSPEO
• Institution: Nanyang Technological University

Thin-film transistors (TFTs) with high electrical performances (mobility > 10 cm2/V s, Vth < 1 V, SS < 1 V/decade, on/off ratio ≈ 106) obtained from the silicon- and oxide-based single-crystalline semiconductor materials require high processing temperature and hence are not suitable for fle...