Indium tungsten oxide thin films for flexible high-performance transistors and neuromorphic electronics
Thin-film transistors (TFTs) with high electrical performances (mobility > 10 cm2/V s, Vth < 1 V, SS < 1 V/decade, on/off ratio ≈ 106) obtained from the silicon- and oxide-based single-crystalline semiconductor materials require high processing temperature and hence are not suitable for fle...
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Main Authors: | , , , , , |
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格式: | Article |
語言: | English |
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2019
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在線閱讀: | https://hdl.handle.net/10356/104476 http://hdl.handle.net/10220/49997 https://doi.org/10.21979/N9/WCSPEO |
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機構: | Nanyang Technological University |
語言: | English |