Indium tungsten oxide thin films for flexible high-performance transistors and neuromorphic electronics
Thin-film transistors (TFTs) with high electrical performances (mobility > 10 cm2/V s, Vth < 1 V, SS < 1 V/decade, on/off ratio ≈ 106) obtained from the silicon- and oxide-based single-crystalline semiconductor materials require high processing temperature and hence are not suitable for fle...
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Main Authors: | Kulkarni, Mohit Rameshchandra, Tiwari, Nidhi, Rajput, Mayank, John, Rohit Abraham, Nguyen, Anh Chien, Mathews, Nripan |
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Other Authors: | School of Materials Science & Engineering |
Format: | Article |
Language: | English |
Published: |
2019
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/104476 http://hdl.handle.net/10220/49997 https://doi.org/10.21979/N9/WCSPEO |
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Institution: | Nanyang Technological University |
Language: | English |
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