Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias

• Main Authors: Liu, P., Li, X. D., Liu, Z., Wong, J. I., Liu, Y., Leong, K. C., Chen, Tupei
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• Online Access: https://hdl.handle.net/10356/100500; http://hdl.handle.net/10220/18610
• Institution: Nanyang Technological University

The effect of short-duration ultraviolet (UV) exposure on the threshold voltage (Vth) of amorphous indium gallium zinc oxide thin film transistors (TFTs) and its recovery characteristics were investigated. The Vth exhibited a significant negative shift after UV exposure. The Vth instability caused b...