Amorphous indium gallium zinc oxide thin film transistor and memory device for future device applications

• المؤلف الرئيسي: Liu, Pan
• مؤلفون آخرون: Chen Tupei
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2015
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/63694
• المؤسسة: Nanyang Technological University

Amorphous Indium Gallium Zinc Oxide (IGZO) is an important material which can be used in transparent thin film transistors (TFTs) due to its high field effect mobility for the next generation flat panel displays. Evolution of electrical properties and TFT characteristics of amorphous IGZO thin films...