Amorphous indium gallium zinc oxide thin film transistor and memory device for future device applications
Amorphous Indium Gallium Zinc Oxide (IGZO) is an important material which can be used in transparent thin film transistors (TFTs) due to its high field effect mobility for the next generation flat panel displays. Evolution of electrical properties and TFT characteristics of amorphous IGZO thin films...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2015
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| Online Access: | https://hdl.handle.net/10356/63694 |
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| Institution: | Nanyang Technological University |
| Language: | English |