Effect of exposure to ultraviolet-activated oxygen on the electrical characteristics of amorphous indium gallium zinc oxide thin film transistors

• Main Authors: Liu, P., Li, X. D., Liu, Z., Wong, J. I., Liu, Y., Leong, K. C., Chen, Tupei
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/98140; http://hdl.handle.net/10220/13305
• Institution: Nanyang Technological University

An exposure of the back channel of an indium gallium zinc oxide (IGZO) thin film transistor (TFT) to ultraviolet (UV)-activated oxygen can effectively shift the threshold voltage (Vth) of the TFT. The Vth decreases linearly with the exposure time while the on-state current greatly increase with the...