Effect of exposure to ultraviolet-activated oxygen on the electrical characteristics of amorphous indium gallium zinc oxide thin film transistors
An exposure of the back channel of an indium gallium zinc oxide (IGZO) thin film transistor (TFT) to ultraviolet (UV)-activated oxygen can effectively shift the threshold voltage (Vth) of the TFT. The Vth decreases linearly with the exposure time while the on-state current greatly increase with the...
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Main Authors: | Liu, P., Li, X. D., Liu, Z., Wong, J. I., Liu, Y., Leong, K. C., Chen, Tupei |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Article |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/98140 http://hdl.handle.net/10220/13305 |
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Institution: | Nanyang Technological University |
Language: | English |
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