Effect of exposure to ultraviolet-activated oxygen on the electrical characteristics of amorphous indium gallium zinc oxide thin film transistors

An exposure of the back channel of an indium gallium zinc oxide (IGZO) thin film transistor (TFT) to ultraviolet (UV)-activated oxygen can effectively shift the threshold voltage (Vth) of the TFT. The Vth decreases linearly with the exposure time while the on-state current greatly increase with the...

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Bibliographic Details
Main Authors: Liu, P., Li, X. D., Liu, Z., Wong, J. I., Liu, Y., Leong, K. C., Chen, Tupei
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/98140
http://hdl.handle.net/10220/13305
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Institution: Nanyang Technological University
Language: English

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