Dopant–dopant interactions in beryllium doped indium gallium arsenide: An ab initio study

• Main Authors: Kulish, Vadym, Liu, Wenyuan, Benistant, Francis, Manzhos, Sergei
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2018
• Subjects: Semiconducting; Diffusion
• Online Access: https://hdl.handle.net/10356/88630; http://hdl.handle.net/10220/44673
• Institution: Nanyang Technological University

We present an ab initio study of dopant–dopant interactions in beryllium-doped InGaAs. We consider defect formation energies of various interstitial and substitutional defects and their combinations. We find that all substitutional–substitutional interactions could be neglected. On the other hand, i...