The development of RAS and RHEED as in situ probes to monitor dopant segregation in GS-MBE on Si (0 0 1)

• Main Authors: Hartell, A.D., Tok, E.S., Zhang, J.
• 其他作者: MATERIALS SCIENCE
• 格式: Conference or Workshop Item
• 出版: 2014
• 主題: A1. Doping; A1. Segregation; A3. Chemical vapour deposition processes; A3. Molecular beam epitaxy; B2. Semiconducting silicon; B2. Semiconducting silicon compounds
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/107316

10.1016/S0022-0248(01)00811-9