The development of RAS and RHEED as in situ probes to monitor dopant segregation in GS-MBE on Si (0 0 1)

The development of RAS and RHEED as in situ probes to monitor dopant segregation in GS-MBE on Si (0 0 1)

10.1016/S0022-0248(01)00811-9

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Bibliographic Details
Main Authors: Hartell, A.D., Tok, E.S., Zhang, J.
Other Authors: MATERIALS SCIENCE
Format: Conference or Workshop Item
Published: 2014
Subjects:
A1. Doping
A1. Segregation
A3. Chemical vapour deposition processes
A3. Molecular beam epitaxy
B2. Semiconducting silicon
B2. Semiconducting silicon compounds
Online Access:http://scholarbank.nus.edu.sg/handle/10635/107316
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/107316

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