The development of RAS and RHEED as in situ probes to monitor dopant segregation in GS-MBE on Si (0 0 1)
10.1016/S0022-0248(01)00811-9
Saved in:
Main Authors: | Hartell, A.D., Tok, E.S., Zhang, J. |
---|---|
Other Authors: | MATERIALS SCIENCE |
Format: | Conference or Workshop Item |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/107316 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Dynamics and surface segregation during GSMBE of Si1-yCy and Si1-x-yGexCy on the Si(0 0 1) surface
by: Price, R.W., et al.
Published: (2014) -
One-dimensional aligned InAs/InP quantum dots chain growth by metalorganic vapor phase epitaxy for 1.55 μm application
by: Teng, J.H., et al.
Published: (2014) -
Highly strained quantum structures grown on GaAs (0 0 1) vicinal substrate by MOCVD
by: Wang, B., et al.
Published: (2014) -
Selective growth of GaAs quantum dots on the triangle nanocavities bounded by SiO2 mask on Si substrate by MBE
by: Zheng, Y.B., et al.
Published: (2014) -
Epitaxial growth of co-doped Eu and Sm in α-Zn0.05Sr 0.95S on (0 0 1)MgO substrate using α-MnS buffer layer
by: Chen, C., et al.
Published: (2014)