The development of RAS and RHEED as in situ probes to monitor dopant segregation in GS-MBE on Si (0 0 1)

The development of RAS and RHEED as in situ probes to monitor dopant segregation in GS-MBE on Si (0 0 1)

10.1016/S0022-0248(01)00811-9

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書目詳細資料
Main Authors:	Hartell, A.D., Tok, E.S., Zhang, J.
其他作者:	MATERIALS SCIENCE
格式:	Conference or Workshop Item
出版:	2014
主題:	A1. Doping A1. Segregation A3. Chemical vapour deposition processes A3. Molecular beam epitaxy B2. Semiconducting silicon B2. Semiconducting silicon compounds
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/107316
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	National University of Singapore

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