The development of RAS and RHEED as in situ probes to monitor dopant segregation in GS-MBE on Si (0 0 1)

10.1016/S0022-0248(01)00811-9

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Bibliographic Details
Main Authors:	Hartell, A.D., Tok, E.S., Zhang, J.
Other Authors:	MATERIALS SCIENCE
Format:	Conference or Workshop Item
Published:	2014
Subjects:	A1. Doping A1. Segregation A3. Chemical vapour deposition processes A3. Molecular beam epitaxy B2. Semiconducting silicon B2. Semiconducting silicon compounds
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/107316
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-107316
record_format	dspace
spelling	sg-nus-scholar.10635-1073162023-10-26T21:51:24Z The development of RAS and RHEED as in situ probes to monitor dopant segregation in GS-MBE on Si (0 0 1) Hartell, A.D. Tok, E.S. Zhang, J. MATERIALS SCIENCE A1. Doping A1. Segregation A3. Chemical vapour deposition processes A3. Molecular beam epitaxy B2. Semiconducting silicon B2. Semiconducting silicon compounds 10.1016/S0022-0248(01)00811-9 Journal of Crystal Growth 227-228 729-734 JCRGA 2014-10-29T08:42:32Z 2014-10-29T08:42:32Z 2001-07 Conference Paper Hartell, A.D., Tok, E.S., Zhang, J. (2001-07). The development of RAS and RHEED as in situ probes to monitor dopant segregation in GS-MBE on Si (0 0 1). Journal of Crystal Growth 227-228 : 729-734. ScholarBank@NUS Repository. https://doi.org/10.1016/S0022-0248(01)00811-9 00220248 http://scholarbank.nus.edu.sg/handle/10635/107316 000169557600141 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	A1. Doping A1. Segregation A3. Chemical vapour deposition processes A3. Molecular beam epitaxy B2. Semiconducting silicon B2. Semiconducting silicon compounds
spellingShingle	A1. Doping A1. Segregation A3. Chemical vapour deposition processes A3. Molecular beam epitaxy B2. Semiconducting silicon B2. Semiconducting silicon compounds Hartell, A.D. Tok, E.S. Zhang, J. The development of RAS and RHEED as in situ probes to monitor dopant segregation in GS-MBE on Si (0 0 1)
description	10.1016/S0022-0248(01)00811-9
author2	MATERIALS SCIENCE
author_facet	MATERIALS SCIENCE Hartell, A.D. Tok, E.S. Zhang, J.
format	Conference or Workshop Item
author	Hartell, A.D. Tok, E.S. Zhang, J.
author_sort	Hartell, A.D.
title	The development of RAS and RHEED as in situ probes to monitor dopant segregation in GS-MBE on Si (0 0 1)
title_short	The development of RAS and RHEED as in situ probes to monitor dopant segregation in GS-MBE on Si (0 0 1)
title_full	The development of RAS and RHEED as in situ probes to monitor dopant segregation in GS-MBE on Si (0 0 1)
title_fullStr	The development of RAS and RHEED as in situ probes to monitor dopant segregation in GS-MBE on Si (0 0 1)
title_full_unstemmed	The development of RAS and RHEED as in situ probes to monitor dopant segregation in GS-MBE on Si (0 0 1)
title_sort	development of ras and rheed as in situ probes to monitor dopant segregation in gs-mbe on si (0 0 1)
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/107316
_version_	1781788374753869824

The development of RAS and RHEED as in situ probes to monitor dopant segregation in GS-MBE on Si (0 0 1)

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