One-dimensional aligned InAs/InP quantum dots chain growth by metalorganic vapor phase epitaxy for 1.55 μm application

One-dimensional aligned InAs/InP quantum dots chain growth by metalorganic vapor phase epitaxy for 1.55 μm application

10.1016/j.jcrysgro.2007.04.024

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Bibliographic Details
Main Authors: Teng, J.H., Dong, J.R., Chong, L.F., Chua, S.J., Wang, Y.J., Chen, A.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
A1. Nanostructures
A3. Metalorganic vapor phase epitaxy
A3. Selective epitaxy
B2. Semiconducting III-V materials
B2. Semiconducting indium phosphide
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82823
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/82823

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